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第一原理シミュレーションに基づいたSiC表面上のSi熱脱離グラフェン成長機構
(Graphene Growth Mechanism by Si Sublimation on SiC Surface Unveiled Through First-Principles Simulations)
応用物理学会秋季学術講演会. 2015.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:21:53 +0900Updated at: 2018-06-05 13:53:14 +0900