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溶媒供給効果による抵抗変化メモリの動作機構解明
(Elucidating Resistive Switching Mechanism of Resistive Random Access Memory bu Utilising the Effect of Solvent Supply)

肥田聡太, 山崎 隆浩, 大野 隆央, 清水敦史, 岸田悟, 木下健太郎.
第78回応用物理学会秋季学術講演会. 2017.

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    Fulltext and dataset(s) on Materials Data Repository (MDR)


      Created at: 2017-07-05 22:49:44 +0900Updated at: 2018-06-05 14:10:25 +0900

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