HOME > Presentation > Detail
CドープIn-Si-Oチャネルの酸化物TFTのバイアスストレス特性の改善
(Improvement of bias stress characteristics in oxide TFT using carbon-doped In-Si-O channel)
電子デバイス界面テクノロジー研究会（第21回）. January 21, 2016-January 23, 2016.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:44:48 +0900Updated at: 2017-07-10 22:17:29 +0900