SAMURAI - NIMS Researchers Database

HOME > Presentation > Detail

単結晶h-BNを用いた高移動度ダイヤモンド電界効果トランジスタ
(High Mobility Diamond Field-Effect Transistor with a Monocrystalline h-BN Gate Dielectric)

第79回応用物理学会秋季学術講演会. 2018.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2018-07-20 16:38:59 +0900 Updated at :2018-07-20 16:38:59 +0900

    ▲ Go to the top of this page