HOME > Presentation > DetailInvestigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layersSANG, Liwen, 任 兵, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. 応用物理学会. September 18, 2018-September 21, 2018.NIMS author(s)LIAO, MeiyongSUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-04 09:35:44 +0900 Updated at: 2019-03-04 09:35:44 +0900