HOME > Presentation > DetailInvestigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layersSANG, Liwen, 任 兵, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. 応用物理学会. 2018.NIMS author(s)SANG, LiwenLIAO, MeiyongKOIDE, YasuoSUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-04 09:35:44 +0900Updated at: 2019-03-04 09:35:44 +0900