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Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

YUGE, Kazuya, NABATAME, Toshihide, IROKAWA, Yoshihiro, OHI, Akihiko, IKEDA, Naoki, 上殿 明良, SANG, Liwen, KOIDE, Yasuo, 大石 知司.
Electron Devices Technology and Manufacturing Conference. 2019.

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    Created at: 2019-10-30 03:00:17 +0900Updated at: 2019-10-30 03:00:17 +0900

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