4H-SiC/SiO2界面O2酸化の第一原理シミュレーション 〜界面における炭素関連欠陥の電子状態〜
(First-Principles Molecular Dynamics Simulations of O2 Oxidation in 4H-SiC/SiO2 ~Electronic Structures of C-related Defects at the Interface Region ~)