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CVD成膜したダイヤモンド上に作製したh-BNゲート絶縁体を用いた電界効果トランジスタ
(Field-effect transistor fabricated on a CVD-grown diamond with a h-BN gate insulator)

2024年第71回応用物理学会春季学術講演会. March 22, 2024-March 25, 2024.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2024-04-02 03:14:39 +0900Updated at: 2024-04-02 03:14:39 +0900

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