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第一原理計算によるa-,m-面上の4H-SiC/SiO2 界面モデル構造の構築

第79回応用物理学会秋季学術講演会. 2018.

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    Created at :2019-03-04 10:08:48 +0900 Updated at :2019-03-04 10:08:48 +0900

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