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４H-SiCトレンチMOSFETにおける加工ダメージのナノ顕微分光解析
(Photoelectron nano-spectroscopy of reactive ion etching-caused damages on trench sidewalls and bottoms in 4H-SiC trench-MOSFET)
The 8th International Symposium on Surface Science. 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-10-17 22:16:59 +0900Updated at: 2018-06-05 14:14:07 +0900