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| Author | Masaharu Oshima, Daisuke Mori, NAGAMURA, Naoka, Shun Konno, Yoshinobu Takahashi, Masato Kotsugi, Hiroshi Nohira, Aki Takigawa, Akihiro Otsuki. |
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| Title | Photoelectron nano-spectroscopy of reactive ion etching-caused damages on trench sidewalls and bottoms in 4H-SiC trench-MOSFET (４H-SiCトレンチMOSFETにおける加工ダメージのナノ顕微分光解析) |
| Event name | The 8th International Symposium on Surface Science |
| Year of publication | 2017 |
| Language | English |
| External references |