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AuthorMasaharu Oshima, Daisuke Mori, NAGAMURA, Naoka, Shun Konno, Yoshinobu Takahashi, Masato Kotsugi, Hiroshi Nohira, Aki Takigawa, Akihiro Otsuki.
TitlePhotoelectron nano-spectroscopy of reactive ion etching-caused damages on trench sidewalls and bottoms in 4H-SiC trench-MOSFET
(4H-SiCトレンチMOSFETにおける加工ダメージのナノ顕微分光解析)
Event nameThe 8th International Symposium on Surface Science
Year of publication2017
LanguageEnglish
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