HOME > Published patent applications > Detail[Published patent application] Cu2O結晶含有層の製法、並びに、Cu2O結晶含有層を有する半導体を備える構造体及びその用途2025-08-13. 2025117918 (Google Patents) NIMS author(s)KAWAMURA, FumioCreated at :2025-08-16 03:11:53 +0900 Updated at :2025-08-16 03:11:53 +0900