hBNヘテロ界面を用いた高移動度ダイヤモンド電界効果トランジスタ
(High-mobility Diamond Field-effect Transistor with an hBN Heterointerface)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2020-11-20 10:42:47 +0900Updated at: 2020-11-20 10:42:47 +0900