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窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ
(Field Effect Transistors by AlN/Diamond Heterostructure)

NEW DIAMOND 28 [2] 36-38. 2012.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2020-11-20 10:42:45 +0900 Updated at :2020-11-20 10:42:45 +0900

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