HOME > Misc > Detail窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ(Field Effect Transistors by AlN/Diamond Heterostructure)井村 将隆, 廖 梅勇, 小出 康夫. NEW DIAMOND 28 [2] 36-38. 2012.NIMS author(s)IMURA, MasatakaLIAO, MeiyongKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2020-11-20 10:42:45 +0900 Updated at :2020-11-20 10:42:45 +0900