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窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ
(Field Effect Transistors by AlN/Diamond Heterostructure)

Author(s)IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo.
Journal titleNEW DIAMOND 28 [2] 36-38
Publisher
Year of publication2012
LanguageJapanese

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