h-BNゲート絶縁体を用いたノーマリーオフ型高移動度ダイヤモンド電界効果トランジスタ
(Normally-off high-mobility diamond field-effect transistor with an h-BN gate insulator)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2022-12-29 03:28:25 +0900Updated at: 2023-10-10 10:59:24 +0900