Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam

HOME > Misc > Detail

Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam

Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski.

2025 22nd International Workshop on Junction Technology (IWJT) 2025 22nd International Workshop on Junction Technology (IWJT) 79-82. 2025.

https://doi.org/10.23919/iwjt66253.2025.11072893

Open Access IEEE (Publisher) Materials Data Repository (MDR)

NIMS author(s)

UZUHASHI, Jun
OHKUBO, Tadakatsu

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam

Created at: 2025-09-18 03:11:36 +0900 Updated at: 2026-09-30 06:07:04 +0900