| 1007件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| T.Saito, H.Fukuhara, C.Masuda, Mikio Fukuhara, Asao Sanpei. . Japanese Journal of Applied Physics. 33 [Part 1, No. 5B] (1994) 2890-2893 10.1143/jjap.33.2890 | |
| 桜井健次. EXAFS Experiments with High-Power Rotating Anode X-rays.. Japanese Journal of Applied Physics. (1993) 261-263 | |
| KAISE, Masatsugu, 斎藤一男, 斎藤一男. Structural Changes and Annealing Behavior of Ar Ion Irradiated Superconducting BiSrCaCuO Thin Films.. Japanese Journal of Applied Physics. (1993) 942-948 | |
| 和田弘昭, 石井紀彦, オリヴィエ・アミエル, 佐藤晃. Crystal Structure and Properties of Ag7-xTaSe6-xIx (0≦x≦1). Japanese Journal of Applied Physics. (1993) 179 | |
| ASANO, Toshihisa, 坂井義和, 井上廉, OSHIKIRI, Mitsutake, 前田弘, Toshihisa Asano, Yoshikazu Sakai, Kiyoshi Inoue, Mitsutake Oshikiri, Hiroshi Maeda. High-Field Pulsed Magnet Wound of Cu-Ag Alloy Wire. Japanese Journal of Applied Physics. 32 [7B] (1993) L1027 10.1143/jjap.32.l1027 | |
| KAISE, Masatsugu, 斎藤一男. Structural Changes and Annealing Behavior of Ar-Ion-Irradiated Superconducting BiSrCaCuO Thin Films.. JAPANESE JOURNAL OF APPLIED PHYSICS. 32 [1993] (1993) 942-948 | |
| SUZUKI, Hiroshi, ARAKI, Hiroshi, 野田哲二, 野田哲二. Effect of Incident Direction of ArF Laser to Graphite Substrates on the Formation of Photo-Chemical Vapor Deposition SiC Film.. Japanese Journal of Applied Physics. 32 [8] (1993) 3566-3571 | |
| H.Takei, M.Tamura, Hiroyuki Takeya, Hidehito Asaoka, Humihiko Takei, Yasuhiro Iye, Masafumi Tamura, Minoru Kinoshita. Growth of Large Isometric YBa2Cu3Ox Single Crystals from Coexisted Refion of Solid With Melt in Y2O3 Crucibles. Japanese Journal of Applied Physics. 32 [Part 1, No. 3A] (1993) 1091-1096 10.1143/jjap.32.1091 | |
| Nobuyuki Koguchi, ONISHI, Keiko, Keiko Ishige. Growth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams.. Japanese Journal of Applied Physics. 32 [Part 1, No. 5A] (1993) 2052-2058 10.1143/jjap.32.2052 | |
| 斎藤一男, 貝瀬正次. Arイオン照射によるBi系超伝導薄膜の表層改質.. Japanese Journal of Applied Physics. (1992) 3533-3538 | |
