| 993件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| ASANO, Toshihisa, 坂井義和, 井上廉, OSHIKIRI, Mitsutake, 前田弘, Toshihisa Asano, Yoshikazu Sakai, Kiyoshi Inoue, Mitsutake Oshikiri, Hiroshi Maeda. High-Field Pulsed Magnet Wound of Cu-Ag Alloy Wire. Japanese Journal of Applied Physics. 32 [7B] (1993) L1027 10.1143/jjap.32.l1027 | |
| KAISE, Masatsugu, 斎藤一男. Structural Changes and Annealing Behavior of Ar-Ion-Irradiated Superconducting BiSrCaCuO Thin Films.. JAPANESE JOURNAL OF APPLIED PHYSICS. 32 [1993] (1993) 942-948 | |
| SUZUKI, Hiroshi, ARAKI, Hiroshi, 野田哲二, 野田哲二. Effect of Incident Direction of ArF Laser to Graphite Substrates on the Formation of Photo-Chemical Vapor Deposition SiC Film.. Japanese Journal of Applied Physics. 32 [8] (1993) 3566-3571 | |
| H.Takei, M.Tamura, Hiroyuki Takeya, Hidehito Asaoka, Humihiko Takei, Yasuhiro Iye, Masafumi Tamura, Minoru Kinoshita. Growth of Large Isometric YBa2Cu3Ox Single Crystals from Coexisted Refion of Solid With Melt in Y2O3 Crucibles. Japanese Journal of Applied Physics. 32 [Part 1, No. 3A] (1993) 1091-1096 10.1143/jjap.32.1091 | |
| Nobuyuki Koguchi, ONISHI, Keiko, Keiko Ishige. Growth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams.. Japanese Journal of Applied Physics. 32 [Part 1, No. 5A] (1993) 2052-2058 10.1143/jjap.32.2052 | |
| 斎藤一男, 貝瀬正次. Arイオン照射によるBi系超伝導薄膜の表層改質.. Japanese Journal of Applied Physics. (1992) 3533-3538 | |
| 斎藤一男, KAISE, Masatsugu. Thermal Spike and Displacement Effects in BiSrCaCuO Thin Films by Ar Ion Beams.. Japanese Journal of Applied Physics. (1992) 3539-3545 | |
| 堀内繁雄. Distribution of oxygen atoms in a YBa2Cu3O6.4 superconductor visualized by ultra-high-resolution electron microscopy. Japanese Journal of Applied Physics. (1992) 1335-38 | |
| 松井良夫, 柳澤佳寿美. High-Resolution Electron Microscopy of Radiation Damage of YBa2Cu4Oy Superconductor Induced by 200KV Electron Beam. Japanese Journal of Applied Physics. (1992) 29 | |
| 堀内繁雄, 呉暁京, 泉光一, 菊田正志. TEM observation of a piled structure of Si/Ga/Si with Ga monolayer. Japanese Journal of Applied Physics. (1992) 119-122 | |
