| 307件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| K. Oka, T. Ito, H. Eisaki, M. Hase, T. Hamasaki, H. Kuroe, T. Sekine. Crystal growth of Cu3−xZnxMo2O9 by continuous solid-state crystallization method. Journal of Crystal Growth. 334 [1] (2011) 108-112 10.1016/j.jcrysgro.2011.08.031 | |
| IMURA, Masataka, NAKAJIMA, Kiyomi, LIAO, Meiyong, KOIDE, Yasuo, Amano Hiroshi. Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH. (2010) 1325-1328 | |
| Kun’ichi Miyazawa, Kayoko Hotta. The effect of solvent ratio and water on the growth of C60 nanowhiskers. Journal of Crystal Growth. 312 [19] (2010) 2764-2770 10.1016/j.jcrysgro.2010.06.020 | |
| Shunichi Hishita, Petr Janeček, Hajime Haneda. Epitaxial growth of tin oxide film on TiO2(110) using molecular beam epitaxy. Journal of Crystal Growth. 312 [20] (2010) 3046-3049 10.1016/j.jcrysgro.2010.07.012 | |
| Shiro Shimada, Hiroki Otani, Akira Miura, Takashi Sekiguchi, Masaaki Yokoyama. Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO. Journal of Crystal Growth. 312 [3] (2010) 452-456 10.1016/j.jcrysgro.2009.11.001 | |
| Masataka Imura, Kiyomi Nakajima, Meiyong Liao, Yasuo Koide, Hiroshi Amano. Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy. Journal of Crystal Growth. 312 [3] (2010) 368-372 10.1016/j.jcrysgro.2009.11.017 | |
| KAWAMURA, Fumio, 外部, 外部, 外部, 外部, 外部, 外部. Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction.. JOURNAL OF CRYSTAL GROWTH. (2009) 3019-3024 | |
| NODA, Takeshi, MANO, Takaaki, KURODA, Takashi, SAKODA, Kazuaki, SAKAKI, Hiroyuki. Spontaneous formation of a cluster of InAs dots along a ring-like zone on (100) GaAs by droplet epitaxy. JOURNAL OF CRYSTAL GROWTH. (2009) 1836-1838 | |
| MANO, Takaaki, KURODA, Takashi, MITSUISHI, Kazutaka, NODA, Takeshi, SAKODA, Kazuaki. High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy. JOURNAL OF CRYSTAL GROWTH. (2009) 1828-1831 | |
| Shunsuke Ohkouchi, Nobuhiko Ozaki, SUGIMOTO, Yoshimasa, Hiroshi Ishikawa, Kiyoshi Asakawa. Site-Controlled In(Ga)As Quantum Dots Fabricated by the Nano-Jet Probe Method. JOURNAL OF CRYSTAL GROWTH. (2009) 1819-1821 | |
