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分野別にみる

論文の分野はクラリベイト・アナリティクス社のESI分類を参考に分類し(Materials Science, Physics, Chemistry, Engineering, Biology)、ほか発表文献タイトル・抄録などから2006年以降刊行の論文検索を行うことができます。

最終更新時刻: 2021年05月15日

73件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • T. Shiroyama, B. S. D. Ch. S. Varaprasad, Y. K. Takahashi, K. Hono. Influence of MgO underlayers on the structure and magnetic properties of FePt-C nanogranular films for heat-assisted magnetic recording media. AIP Advances. 6 [10] (2016) 105105 10.1063/1.4964930
  • Yu-Chun Chen, Simon Sawatzki, Semih Ener, Hossein Sepehri-Amin, Andreas Leineweber, Giuliano Gregori, Fei Qu, Shreyas Muralidhar, Tadakatsu Ohkubo, Kazuhiro Hono, Oliver Gutfleisch, Helmut Kronmüller, Gisela Schütz, Eberhard Goering. On the synthesis and microstructure analysis of high performance MnBi. AIP Advances. 6 [12] (2016) 125301 10.1063/1.4971759
  • Zhenchao Wen, Junyeon Kim, Hiroaki Sukegawa, Masamitsu Hayashi, Seiji Mitani. Spin-orbit torque in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO epitaxial magnetic heterostructures. AIP Advances. 6 [5] (2016) 056307 10.1063/1.4944339
  • H. Oda, A. Yamanaka, N. Ozaki, N. Ikeda, Y. Sugimoto. Operation of an InAs quantum-dot embedded GaAs photonic crystal slab waveguide laser by using two-photon pumping for photonics integrated circuits. AIP Advances. 6 [6] (2016) 065215 10.1063/1.4954397
  • K. Kamishima, T. Mashiko, K. Kakizaki, M. Sakai, K. Watanabe, H. Abe. Synthesis and magnetic characterization of Sr-based Ni2X-type hexaferrite. AIP Advances. 5 [10] (2015) 107132 10.1063/1.4934792
  • T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy. AIP Advances. 6 [4] (2016) 045312 10.1063/1.4947464
  • Yao Yin, Huabin Sun, Liwen Sang, Peng Chen, Youdou Zheng, Benjamin Dierre, Masatomo Sumiya, Yi Shi, Takashi Sekiguchi. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures. AIP Advances. 5 [5] (2015) 057129 10.1063/1.4921207
  • Ryan G. Banal, Masataka Imura, Yasuo Koide. Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer. AIP Advances. 5 [9] (2015) 097143 10.1063/1.4931159
  • Tianzhuo Zhan, Satoshi Minamoto, Yibin Xu, Yoshihisa Tanaka, Yutaka Kagawa. Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation. AIP Advances. 5 [4] (2015) 047102 10.1063/1.4916974
  • Meng-Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Wei Ou-Yang, Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi. Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process. AIP Advances. 5 [1] (2015) 017116 10.1063/1.4905903
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