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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2025年01月19日

65件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Naoki Tsunoda, Yu Kumagai, Akira Takahashi, Fumiyasu Oba. Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles. Physical Review Applied. 10 [1] (2018) 011001 10.1103/physrevapplied.10.011001 Open Access
  • Kan Hayashi, Yuichiro Matsuzaki, Takashi Taniguchi, Takaaki Shimo-Oka, Ippei Nakamura, Shinobu Onoda, Takeshi Ohshima, Hiroki Morishita, Masanori Fujiwara, Shiro Saito, Norikazu Mizuochi. Optimization of Temperature Sensitivity Using the Optically Detected Magnetic-Resonance Spectrum of a Nitrogen-Vacancy Center Ensemble. Physical Review Applied. 10 [3] (2018) 034009 10.1103/physrevapplied.10.034009
  • Xiayu Linpeng, Maria L.K. Viitaniemi, Aswin Vishnuradhan, Y. Kozuka, Cameron Johnson, M. Kawasaki, Kai-Mei C. Fu. Coherence Properties of Shallow Donor Qubits in ZnO. Physical Review Applied. 10 [6] (2018) 064061 10.1103/physrevapplied.10.064061
  • Daniel Richardson, Sidney Katz, J. Wang, Y. K. Takahashi, Kumar Srinivasan, Alan Kalitsov, K. Hono, Antony Ajan, Mingzhong Wu. Near- Tc Ferromagnetic Resonance and Damping in FePt -Based Heat-Assisted Magnetic Recording Media. Physical Review Applied. 10 [5] (2018) 054046 10.1103/physrevapplied.10.054046
  • Claas Abert, Hossein Sepehri-Amin, Florian Bruckner, Christoph Vogler, Masamitsu Hayashi, Dieter Suess. Back-Hopping in Spin-Transfer-Torque Devices: Possible Origin and Countermeasures. Physical Review Applied. 9 [5] (2018) 054010 10.1103/physrevapplied.9.054010
  • Yu Kumagai, Naoki Tsunoda, Fumiyasu Oba. Point Defects and p -Type Doping in ScN from First Principles. Physical Review Applied. 9 [3] (2018) 034019 10.1103/physrevapplied.9.034019 Open Access
  • A. Inhofer, J. Duffy, M. Boukhicha, E. Bocquillon, J. Palomo, K. Watanabe, T. Taniguchi, I. Estève, J. M. Berroir, G. Fève, B. Plaçais, B. A. Assaf. rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors. Physical Review Applied. 9 [2] (2018) 024022 10.1103/physrevapplied.9.024022
  • Takamasa Hamai, Shunto Arai, Hiromi Minemawari, Satoru Inoue, Reiji Kumai, Tatsuo Hasegawa. Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors. Physical Review Applied. 8 [5] (2017) 054011 10.1103/physrevapplied.8.054011
  • V. Ranjan, S. Zihlmann, P. Makk, K. Watanabe, T. Taniguchi, C. Schönenberger. Contactless Microwave Characterization of Encapsulated Graphene p−n Junctions. Physical Review Applied. 7 [5] (2017) 054015 10.1103/physrevapplied.7.054015
  • Le Zhang, Xiaojie Lou, Dong Wang, Yan Zhou, Yang Yang, Martin Kuball, Michael A. Carpenter, Xiaobing Ren. Glass-Glass Transitions by Means of an Acceptor-Donor Percolating Electric-Dipole Network. Physical Review Applied. 8 [5] (2017) 054018 10.1103/physrevapplied.8.054018
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