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論文・分野で探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2023年03月23日

845件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBD03 10.35848/1347-4065/abd538
  • Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates. Japanese Journal of Applied Physics. 60 [6] (2021) 068003 10.35848/1347-4065/ac0260
  • Ken Takazawa, Jun-ichi Inoue. Resonance splitting in microring resonators constructed from organic nanofiber active waveguides. Japanese Journal of Applied Physics. 60 [6] (2021) 062004 10.35848/1347-4065/ac00ff
  • Kazuaki Kobayashi, Hirokazu Takaki, Masato Shimono, Nobuhiko Kobayashi, Kenji Hirose. Electronic and lattice properties of nanostructured TiN/MgO and ScN/MgO superlattices. Japanese Journal of Applied Physics. 60 [SE] (2021) SE1006 10.35848/1347-4065/abf601
  • Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo. Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties. Japanese Journal of Applied Physics. 60 [3] (2021) 031009 10.35848/1347-4065/abe72e
  • Nozomi Mishima, Tohru Tsuruoka, Tsuyoshi Hasegawa. Measurement of changes in resistance of a Ag2+δ S nano-island on removal of dopant δ-Ag atoms. Japanese Journal of Applied Physics. 60 [SE] (2021) SE1001 10.35848/1347-4065/abefab
  • Maiko Mikami, Naoya Tanahashi, Tohru Tsuruoka, Tsuyoshi Hasegawa. Changes in the temperature dependence of Ag/Ta2O5/Pt gapless-type atomic switches caused by desorption/adsorption of water molecules from/into the Ta2O5 matrix. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCF05 10.35848/1347-4065/abe7d5
  • Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCM01 10.35848/1347-4065/abe685
  • Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3. Japanese Journal of Applied Physics. 60 [3] (2021) 030903 10.35848/1347-4065/abde54
  • Mariana S. L. Lima, Takashi Aizawa, Isao Ohkubo, Takeaki Sakurai, Takao Mori. Improvement of power factor in the room temperature range of Mg2Sn1−x Ge x . Japanese Journal of Applied Physics. 60 [SB] (2021) SBBF06 10.35848/1347-4065/abd9cd
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