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分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年05月17日

790件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano. Impact of high-temperature implantation of Mg ions into GaN. Japanese Journal of Applied Physics. 59 [5] (2020) 056502 10.35848/1347-4065/ab8b3d
  • Ryota Ishii, Shinichi Shikata, Tokuyuki Teraji, Hisao Kanda, Hideyuki Watanabe, Mitsuru Funato, Yoichi Kawakami. Intrinsic exciton transitions of isotopically purified <sup>13</sup>C studied by photoluminescence and transmission spectroscopy. Japanese Journal of Applied Physics. 59 [1] (2020) 010903 10.7567/1347-4065/ab5b77
  • Takuya Kawazu. Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination. Japanese Journal of Applied Physics. 59 [12] (2020) 124003 10.35848/1347-4065/abc8a4
  • Qing Zhao, Tomohiro Abe, Chikako Moriyoshi, Sangwook Kim, Ayako Taguchi, Hiroki Moriwake, Hong-Tao Sun, Yoshihiro Kuroiwa. Charge order of bismuth ions and nature of chemical bonds in double perovskite-type oxide BaBiO3 visualized by synchrotron radiation X-ray diffraction. Japanese Journal of Applied Physics. 59 [9] (2020) 095505 10.35848/1347-4065/abb00d
  • Yoshihiro Irokawa. Effect of hydrogen on Pt/GaN Schottky diodes. Japanese Journal of Applied Physics. 59 [12] (2020) 120901 10.35848/1347-4065/abc65f
  • Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Takashi Shinohe. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism. Japanese Journal of Applied Physics. 59 [11] (2020) 115501 10.35848/1347-4065/abbc57
  • Nanami Goto, Weifang Lu, Hideki Murakami, Mizuki Terazawa, Jun Uzuhashi, Tadakatsu Ohkubo, Kazuhiro Hono, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki. Characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE. Japanese Journal of Applied Physics. 59 [SG] (2020) SGGE05 10.35848/1347-4065/ab70aa
  • Kongping Wu, Liyong Gan, Leng Zhang, Pengzhan Zhang, Fei Liu, Jing Fan, Liwen Sang, Meiyong Liao. Generating robust two-dimensional hole gas at the interface between boron nitride and diamond. Japanese Journal of Applied Physics. 59 [9] (2020) 090910 10.35848/1347-4065/abb20c
  • Akinori Tateyama, Yoshiharu Ito, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Takeshi Yoshimura, Hiroshi Funakubo. Dependency of direct and inverse transverse piezoelectric properties on composition in self-polarized epitaxial (K x Na1−x )NbO3 films grown via a hydrothermal method. Japanese Journal of Applied Physics. 59 [SP] (2020) SPPC03 10.35848/1347-4065/aba9b3
  • Yoshitaka Ehara, Takaaki Nakashima, Daichi Ichinose, Takao Shimizu, Tomoaki Yamada, Ken Nishida, Hiroshi Funakubo. Temperature dependence on the domain structure of epitaxial PbTiO3 films grown on single crystal substrates with different lattice parameters. Japanese Journal of Applied Physics. 59 [SP] (2020) SPPB01 10.35848/1347-4065/aba2bf
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