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機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年07月23日

31件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Meiyong Liao, Liwen Sang, Takehiro Shimaoka, Masataka Imura, Satoshi Koizumi, Yasuo Koide. Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases. Advanced Electronic Materials. 5 [5] (2019) 1800832 10.1002/aelm.201800832
  • Shuai Liu, Kai Yuan, Xiaolong Xu, Ruoyu Yin, Der-Yuh Lin, Yanping Li, Kenji Watanabe, Takashi Taniguchi, Yongqiang Meng, Lun Dai, Yu Ye. Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters. Advanced Electronic Materials. 5 [2] (2019) 1800419 10.1002/aelm.201800419
  • Natália P. Rezende, Alisson R. Cadore, Andreij C. Gadelha, Cíntia L. Pereira, Vinícius Ornelas, Kenji Watanabe, Takashi Taniguchi, André S. Ferlauto, Angelo Malachias, Leonardo C. Campos, Rodrigo G. Lacerda. Probing the Electronic Properties of Monolayer MoS2 via Interaction with Molecular Hydrogen. Advanced Electronic Materials. 5 [2] (2019) 1800591 10.1002/aelm.201800591
  • Zhenchao Wen, Takahide Kubota, Koki Takanashi. Epitaxial CuN Films with Highly Tunable Lattice Constant for Lattice-Matched Magnetic Heterostructures with Enhanced Thermal Stability. Advanced Electronic Materials. 4 [1] (2018) 1700367 10.1002/aelm.201700367
  • Junyang He, Nan Fang, Keigo Nakamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+ -WSe2 Source. Advanced Electronic Materials. 4 [7] (2018) 1800207 10.1002/aelm.201800207
  • Yosei Shibata, Jun'ya Tsutsumi, Satoshi Matsuoka, Hiromi Minemawari, Shunto Arai, Reiji Kumai, Tatsuo Hasegawa. Unidirectionally Crystallized Stable n-Type Organic Thin-Film Transistors Based on Solution-Processable Donor-Acceptor Compounds. Advanced Electronic Materials. 3 [7] (2017) 1700097 10.1002/aelm.201700097
  • Hoseok Heo, Ji Ho Sung, Ji-Hoon Ahn, Fereshte Ghahari, Takashi Taniguchi, Kenji Watanabe, Philip Kim, Moon-Ho Jo. Frank-van der Merwe Growth versus Volmer-Weber Growth in Successive Stacking of a Few-Layer Bi2 Te3 /Sb2 Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice-Mismatch with Seed Substrates. Advanced Electronic Materials. 3 [2] (2017) 1600375 10.1002/aelm.201600375
  • Kazuyoshi Kobashi, Ryoma Hayakawa, Toyohiro Chikyow, Yutaka Wakayama. Negative Differential Resistance Transistor with Organic p-n Heterojunction. Advanced Electronic Materials. 3 [8] (2017) 1700106 10.1002/aelm.201700106
  • Hongyang Zhao, Kang Cai, Zhenxiang Cheng, Tingting Jia, Hideo Kimura, Zhibin Ma, Qiuming Fu, Zhideng Huang, Takao Matsumoto, Tetsuya Tohei, Naoya Shibata, Yuichi Ikuhara. A Novel Class of Multiferroic Material, Bi4 Ti3 O12 ·n BiFeO3 with Localized Magnetic Ordering Evaluated from Their Single Crystals. Advanced Electronic Materials. 3 [1] (2017) 1600254 10.1002/aelm.201600254
  • Junko Aimi, Chen-Tsyr Lo, Hung-Chin Wu, Chih-Feng Huang, Takashi Nakanishi, Masayuki Takeuchi, Wen-Chang Chen. Phthalocyanine-Cored Star-Shaped Polystyrene for Nano Floating Gate in Nonvolatile Organic Transistor Memory Device. Advanced Electronic Materials. 2 [2] (2016) 1500300 10.1002/aelm.201500300 Open Access
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