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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年06月24日

193件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Md. Emrul Kayesh, Kiyoto Matsuishi, Towhid H. Chowdhury, Ryuji Kaneko, Jae-Joon Lee, Takeshi Noda, Ashraful Islam. Influence of anti-solvents on CH3NH3PbI3 films surface morphology for fabricating efficient and stable inverted planar perovskite solar cells. Thin Solid Films. 663 (2018) 105-115 10.1016/j.tsf.2018.08.015
  • Takashi Onaya, Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishima, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura. Improved leakage current properties of ZrO 2 /(Ta/Nb)O x -Al 2 O 3 /ZrO 2 nanolaminate insulating stacks for dynamic random access memory capacitors. Thin Solid Films. 655 (2018) 48-53 10.1016/j.tsf.2018.02.010
  • Akira Uedono, Taketoshi Tanaka, Norikazu Ito, Ken Nakahara, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Masatomo Sumiya. Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams. Thin Solid Films. 639 (2017) 78-83 10.1016/j.tsf.2017.08.021
  • Yuta Nakayasu, Takaaki Tomai, Nobuto Oka, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Liwen Sang, Masatomo Sumiya, Itaru Honma. Fabrication of Cu 2 ZnSnS 4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization. Thin Solid Films. 638 (2017) 244-250 10.1016/j.tsf.2017.07.063
  • Yue Dong, Xiaodong Li, Shaohong Liu, Qi Zhu, Mu Zhang, Ji-Guang Li, Xudong Sun. The effect of substrate clamping on the paraelectric to antiferroelectric phase transition in Nd-doped BiFeO3 thin films. Thin Solid Films. 616 (2016) 767-772 10.1016/j.tsf.2016.09.024
  • Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors. Thin Solid Films. 614 (2016) 73-78 10.1016/j.tsf.2016.03.005
  • Tetsuji Kume, Fumitaka Ohashi, Kentaro Sakai, Atsuhiko Fukuyama, Motoharu Imai, Haruhiko Udono, Takayuki Ban, Hitoe Habuchi, Hidetoshi Suzuki, Tetsuo Ikari, Shigeo Sasaki, Shuichi Nonomura. Thin film of guest-free type-II silicon clathrate on Si(111) wafer. Thin Solid Films. 609 (2016) 30-34 10.1016/j.tsf.2016.03.056
  • Kattareeya Taweesup, Ippei Yamamoto, Toyohiro Chikyow, Gobboon Lothongkum, Kazutoshi Tsukagoshi, Tomoji Ohishi, Sukkaneste Tungasmita, Patama Visuttipitukul, Kazuhiro Ito, Makoto Takahashi, Toshihide Nabatame. Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide. Thin Solid Films. 598 (2016) 126-130 10.1016/j.tsf.2015.11.070
  • Somu Kumaragurubaran, Takahiro Nagata, Yoshifumi Tsunekawa, Kenichiro Takahashi, Sung-Gi Ri, Setsu Suzuki, Toyohiro Chikyow. Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor. Thin Solid Films. 592 (2015) 29-33 10.1016/j.tsf.2015.09.012
  • Takahiro Nagata, Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura, Toyohiro Chikyow. Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition. Thin Solid Films. 591 (2015) 105-110 10.1016/j.tsf.2015.08.031
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