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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年03月29日

19件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors. IEEE Electron Device Letters. 38 [7] (2017) 922-925 10.1109/led.2017.2702744
  • Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema Movva, Kyounghwan Kim, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET. IEEE Electron Device Letters. 36 [4] (2015) 405-407 10.1109/led.2015.2398737
  • Yong Xu, Chuan Liu, William Scheideler, Songlin Li, Wenwu Li, Yen-Fu Lin, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi. Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise. IEEE Electron Device Letters. 34 [10] (2013) 1298-1300 10.1109/led.2013.2277613
  • Yong Xu, William Scheideler, Chuan Liu, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi. Contact Thickness Effects in Bottom-Contact Coplanar Organic Field-Effect Transistors. IEEE Electron Device Letters. 34 [4] (2013) 535-537 10.1109/led.2013.2244059
  • Han Wang, Thiti Taychatanapat, Allen Hsu, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero, Tomas Palacios. BN/Graphene/BN Transistors for RF Applications. IEEE Electron Device Letters. 32 [9] (2011) 1209-1211 10.1109/led.2011.2160611 Open Access
  • James Stott, Akichika Kumatani, Takeo Minari, Kazuhito Tsukagoshi, Sandrine Heutz, Gabriel Aeppli, Arokia Nathan. Bottom-Contact Pentacene Thin-Film Transistors on Silicon Nitride. IEEE Electron Device Letters. 32 [9] (2011) 1305-1307 10.1109/led.2011.2160520
  • S D Wang, Y Yan, K Tsukagoshi. Transition-Voltage Method for Estimating Contact Resistance in Organic Thin-Film Transistors. IEEE Electron Device Letters. 31 [5] (2010) 509-511 10.1109/led.2010.2044137
  • N. Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamada, Y. Nara. Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High-k Dielectrics. IEEE Electron Device Letters. 28 [5] (2007) 363-365 10.1109/led.2007.894655
  • 山田貴壽, 澤邊厚, S. Koizumi, 伊藤順司, 岡野健, T. Yamada, A. Sawabe, J. Itoh, K. Okano. Uniform electron emission from a nitrogen-doped diamond-based electron emitter fabricated by the sintering technique. IEEE Electron Device Letters. 21 [11] (2000) 531-533 10.1109/55.877201
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