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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年09月11日

1779件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Yuichi Oshima, Shingo Yagyu, Takashi Shinohe. Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along ⟨1¯21¯0⟩. Journal of Applied Physics. 130 [17] (2021) 175304 10.1063/5.0068097 Open Access
  • Masamichi Nishino, Yogendra Singh, Kamel Boukheddaden, Seiji Miyashita. Tutorial on elastic interaction models for multistep spin-crossover transitions. Journal of Applied Physics. 130 [14] (2021) 141102 10.1063/5.0065890
  • Kazunori Komori, Shunichi Arisawa, Minoru Tachiki, Shuuichi Ooi, Tadayuki Hayashi, Kazuhiro Endo. Preparation of a high-T c superconducting magnetic flux transformer with a 100 mm bore coil and static magnetic field transfer at 77 K.. Japanese Journal of Applied Physics. (2021) 10.35848/1347-4065/ac0406
  • Ryo Matsumoto, Satoshi Nakano, Sayaka Yamamoto, Yoshihiko Takano. Synthesis and electrical transport measurement of superconducting hydrides using diamond anvil cell with boron-doped diamond electrodes. Japanese Journal of Applied Physics. 60 [9] (2021) 090902 10.35848/1347-4065/ac1a49
  • Bálint Fülöp, Albin Márffy, Endre Tóvári, Máté Kedves, Simon Zihlmann, David Indolese, Zoltán Kovács-Krausz, Kenji Watanabe, Takashi Taniguchi, Christian Schönenberger, István Kézsmárki, Péter Makk, Szabolcs Csonka. New method of transport measurements on van der Waals heterostructures under pressure. Journal of Applied Physics. 130 [6] (2021) 064303 10.1063/5.0058583
  • Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata. Effects of Zn x Mn1−x S buffer layer on nonpolar AlN growth on Si (100) substrate. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG02 10.35848/1347-4065/abf07a
  • Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, Masami Mesuda, Liwen Sang, Toyohiro Chikyow. Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG03 10.35848/1347-4065/abf07f
  • Akihiro Yamashita, Takahiro Nagata, Shinjiro Yagyu, Toru Asahi, Toyohiro Chikyow. Accelerating two-dimensional X-ray diffraction measurement and analysis with density-based clustering for thin films. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG04 10.35848/1347-4065/abf2d8
  • D. Bessas, H. Fukui, K. Sugimoto, K. Glazyrin, I. Sergueev, G. Levchenko, A. Dukhnenko, V. Filipov, O. Isnard, D. Ishikawa, H. Yoshikawa, O. Sakata, A. Q. R. Baron. Physical properties of YB66 and consideration of possible use for high-resolution X-ray optics. Journal of Applied Physics. 130 [2] (2021) 025105 10.1063/5.0054482
  • Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBD03 10.35848/1347-4065/abd538
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