| 45件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Takashi Onaya, Koji Kita. (Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors. ECS Transactions. 113 [2] (2024) 51-59 10.1149/11302.0051ecst | |
| Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress. ECS Transactions. 112 [1] (2023) 109-117 10.1149/11201.0109ecst | |
| Takahiro Nagata, Somu Kumaragurubaran, Kenichiro Takahashi, Sung-Gi Ri, Toyohiro Chikyow. (Invited) Combinatorial Synthesis and Interface Analysis for Development of High Dielectric Constant Thin Films. ECS Transactions. 108 [2] (2022) 61-68 10.1149/10802.0061ecst | |
| Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing. ECS Transactions. 108 [5] (2022) 79-82 10.1149/10805.0079ecst | |
| Ryo Matsumura, Naoki Fukata. Formation of Free Hydrogen Gas By Annealing ALD-Al2O3/Si Stacked Structure. ECS Transactions. 108 [5] (2022) 57-61 10.1149/10805.0057ecst | |
| Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide. (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device. ECS Transactions. (2021) 113-120 10.1149/10404.0113ecst | |
| Tomomi Sawada, Toshihide Nabatame, Takashi Onaya, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi. Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures. ECS Transactions. (2021) 121-128 10.1149/10404.0121ecst | |
| Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita. Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−XO2-Based Metal-Ferroelectric Semiconductor. ECS Transactions. (2021) 129-135 10.1149/10404.0129ecst | |
| Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications. ECS Transactions. (2021) 147-150 10.1149/10202.0147ecst | |
| Ryo Matsumura, Naoki Fukata. Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing. ECS Transactions. (2021) 141-146 10.1149/10202.0141ecst | |
