SAMURAI - NIMS Researchers Database

HOME > 研究者を検索 > 論文・分野から探す

論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年11月12日

22件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Yoshihiro Irokawa, Toshihide Nabatame, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Kazuhito Tsukagoshi, Yasuo Koide. Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process. ECS Journal of Solid State Science and Technology. 13 [8] (2024) 085003 10.1149/2162-8777/ad6fd2 Open Access
  • Yoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide. Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen. ECS Journal of Solid State Science and Technology. 13 [4] (2024) 045002 10.1149/2162-8777/ad3959 Open Access
  • Kohsei Takahashi, Shin-ichi Todoroki, Takashi Takeda, Naoto Hirosaki. Quantum Efficiency Measurement of Single-Particle Phosphor by Proximity Method. ECS Journal of Solid State Science and Technology. 12 [7] (2023) 076002 10.1149/2162-8777/ace0da
  • Yoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Junya Nishii, Toshihide Nabatame, Yasuo Koide, Takatomi Izumi, Junya Nishii. Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs. ECS Journal of Solid State Science and Technology. 12 [5] (2023) 055007 10.1149/2162-8777/acd1b4 Open Access
  • Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide. Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics. ECS Journal of Solid State Science and Technology. 11 [8] (2022) 085010 10.1149/2162-8777/ac8a70 Open Access
  • Jian Xu, Shiro Funahashi, Kohsei Takahashi, Takayuki Nakanishi, Naoto Hirosaki, Takashi Takeda. Cyan-Emitting Sialon-Polytypoid Phosphor Discovered by a Single-Particle-Diagnosis Approach. ECS Journal of Solid State Science and Technology. 10 [11] (2021) 116002 10.1149/2162-8777/ac331c
  • Jumpei Ueda, Jian Xu, Shota Takemura, Takayuki Nakanishi, Shun Miyano, Hiroyo Segawa, Setsuhisa Tanabe. How Many Electron Traps are formed in Persistent Phosphors?. ECS Journal of Solid State Science and Technology. 10 [11] (2021) 116003 10.1149/2162-8777/ac2e4e Open Access
  • Ryo Matsumura, Naoki Fukata. Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin. ECS Journal of Solid State Science and Technology. 9 [6] (2020) 063002 10.1149/2162-8777/aba4f1
  • Marco Peres, A. J. S. Fernandes, F. J. Oliveira, L. C. Alves, E. Alves, T. S. Monteiro, S. Cardoso, M. Alonso-Orts, E. Nogales, B. Méndez, E. G. Víllora, K. Shimamura, K. Lorenz. Micro-Opto-Electro-Mechanical Device Based on Flexible β-Ga2O3 Micro-Lamellas. ECS Journal of Solid State Science and Technology. 8 [7] (2019) Q3235-Q3241 10.1149/2.0441907jss Open Access
  • Shuxing Li, Rong-Jun Xie, Takashi Takeda, Naoto Hirosaki. Critical Review—Narrow-Band Nitride Phosphors for Wide Color-Gamut White LED Backlighting. ECS Journal of Solid State Science and Technology. 7 [1] (2018) R3064-R3078 10.1149/2.0051801jss Open Access
  • ▲ページトップへ移動