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分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年08月11日

796件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Ryo Matsumoto, Satoshi Nakano, Sayaka Yamamoto, Yoshihiko Takano. Synthesis and electrical transport measurement of superconducting hydrides using diamond anvil cell with boron-doped diamond electrodes. Japanese Journal of Applied Physics. 60 [9] (2021) 090902 10.35848/1347-4065/ac1a49
  • Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, Masami Mesuda, Liwen Sang, Toyohiro Chikyow. Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG03 10.35848/1347-4065/abf07f
  • Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata. Effects of Zn x Mn1−x S buffer layer on nonpolar AlN growth on Si (100) substrate. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG02 10.35848/1347-4065/abf07a
  • Akihiro Yamashita, Takahiro Nagata, Shinjiro Yagyu, Toru Asahi, Toyohiro Chikyow. Accelerating two-dimensional X-ray diffraction measurement and analysis with density-based clustering for thin films. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCG04 10.35848/1347-4065/abf2d8
  • Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBD03 10.35848/1347-4065/abd538
  • Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates. Japanese Journal of Applied Physics. 60 [6] (2021) 068003 10.35848/1347-4065/ac0260
  • Ken Takazawa, Jun-ichi Inoue. Resonance splitting in microring resonators constructed from organic nanofiber active waveguides. Japanese Journal of Applied Physics. 60 [6] (2021) 062004 10.35848/1347-4065/ac00ff
  • Kazuaki Kobayashi, Hirokazu Takaki, Masato Shimono, Nobuhiko Kobayashi, Kenji Hirose. Electronic and lattice properties of nanostructured TiN/MgO and ScN/MgO superlattices. Japanese Journal of Applied Physics. 60 [SE] (2021) SE1006 10.35848/1347-4065/abf601
  • Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo. Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties. Japanese Journal of Applied Physics. 60 [3] (2021) 031009 10.35848/1347-4065/abe72e
  • Maiko Mikami, Naoya Tanahashi, Tohru Tsuruoka, Tsuyoshi Hasegawa. Changes in the temperature dependence of Ag/Ta2O5/Pt gapless-type atomic switches caused by desorption/adsorption of water molecules from/into the Ta2O5 matrix. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCF05 10.35848/1347-4065/abe7d5
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