| 27 article(s) found. Sorted by publication dates. (Help) | |
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| Katsumi Nagaoka, Shun-ichiro Ohmi. Bias-voltage-dependent measurement of apparent barrier height on low-work-function thin film. Journal of Vacuum Science & Technology B. 38 [6] (2020) 062801 10.1116/6.0000436 Open Access | |
| Tomomi Akiyama, Naoya Miyauchi, Akiko N. Itakura, Takayuki Yamagishi, Satoka Aoyagi. Fusion data analysis of imaging data of hydrogen-permeated steel obtained by complementary methods. Journal of Vacuum Science & Technology B. 38 [3] (2020) 034007 10.1116/6.0000009 Open Access | |
| Katsuhisa Murakami, Shunsuke Tanaka, Takuya Iijima, Masayoshi Nagao, Yoshihiro Nemoto, Masaki Takeguchi, Yoichi Yamada, Masahiro Sasaki. Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36 [2] (2018) 02C110 10.1116/1.5006866 | |
| Chikako Sakai, Nobuyuki Ishida, Shoko Nagano, Keiko Onishi, Daisuke Fujita. In situ voltage-application system for active voltage contrast imaging in helium ion microscope. Journal of Vacuum Science & Technology B. 36 [4] (2018) 042903 10.1116/1.5031086 | |
| Tin S. Cheng, Andrew Davies, Alex Summerfield, YongJin Cho, Izabela Cebula, Richard J. A. Hill, Christopher J. Mellor, Andrei N. Khlobystov, Takashi Taniguchi, Kenji Watanabe, Peter H. Beton, C. Thomas Foxon, Laurence Eaves, Sergei V. Novikov. High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34 [2] (2016) 02L101 10.1116/1.4938157 Open Access | |
| Kentaro Watanabe, Masakazu Ichikawa, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe. Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30 [2] (2012) 021802 10.1116/1.3684985 | |
| K. Nomura, T. Nagao, B. L. Cho, H. Katsuda, T. Matsumura, C. Oshima. Thermodynamically stable single-atom tips of Au-Mo alloy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27 [6] (2009) 2432 10.1116/1.3263248 | |
| Meiyong Liao, Yasuo Koide, Jose Alvarez. Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24 [1] (2006) 185 10.1116/1.2151909 | |
| Y. Sakuma, M. Takeguchi, K. Takemoto, S. Hirose, T. Usuki, N. Yokoyama. Role of thin cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23 [4] (2005) 1741 10.1116/1.1949216 | |
| S. Bysakh, M. Shimojo, K. Mitsuishi, K. Furuya. Mechanisms of nano-hole drilling due to nano-probe intense electron beam irradiation on a stainless steel. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22 [6] (2004) 2620 10.1116/1.1811626 | |
