| 1027 article(s) found. Sorted by publication dates. (Help) | |
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| Hironori Okumura, Satoshi Iida, Shigeki Hirose, Kosuke Itabashi, Manabu Togawa, Masaya Miyahara, Jiro Nishinaga, Masataka Imura, Keigo Urasaki, Tadaaki Isobe. GaN radiation detectors with low-gain avalanche diode structure. Japanese Journal of Applied Physics. 65 [1] (2026) 016501 10.35848/1347-4065/ae2dad | |
| Masato Oda, Tsuyoshi Miyazaki. Stabilities and electronic states of Mg layers in the polarity inversion layer at GaN(0001) interfaces. Japanese Journal of Applied Physics. 65 [1] (2026) 011001 10.35848/1347-4065/ae2a87 | |
| T. Sato, Y. Cao, M. Imai, J.-M. Mouesca, T. Suemasu, S. Gambarelli. Defects in BaSi
2
by EPR, PL and DFT. Japanese Journal of Applied Physics. 64 [12] (2025) 120802 10.35848/1347-4065/ae23d8 | |
| Jun-ichi Inoue. The influence of anisotropic magnetic field fluctuations on the accuracy of static magnetic field measurements using spin-1 defect quantum sensors. Japanese Journal of Applied Physics. 64 [12] (2025) 125001 10.35848/1347-4065/ae2175 | |
| Masashi Suezawa, Naoki Fukata, Ichiro Yonenaga. Thermal equilibrium vacancies in Si crystals doped with atoms of Group III, IV, and V: determination of formation energies and entropies by a slow quenching method and their analyses. Japanese Journal of Applied Physics. 64 [12] (2025) 125502 10.35848/1347-4065/ae1c85 | |
| Daiki Nishioka, Kaoru Shibata, Wataru Namiki, Kazuya Terabe, Takashi Tsuchiya. Physical masking-induced enhancement of information processing capacity in a redox-type ion-gating reservoir. Japanese Journal of Applied Physics. 64 [11] (2025) 11SP25 10.35848/1347-4065/ae1d84 Open Access | |
| Motoharu Imai. Electronic states of the functional semiconducting silicides Mg
2
Si, BaSi
2
, and
β
-FeSi
2. Japanese Journal of Applied Physics. 64 [12] (2025) 128001 10.35848/1347-4065/ae1e00 | |
| Walid Bin Ali, Pamoda Piyumali Kahagalla, Masaya Taguchi, Mitsuharu Yashima, Hiroya Sakurai, Yoshihiko Takano, Shigeru Horii, Hidekazu Mukuda. Biaxial magnetic alignment and orthorhombic twin microstructure in layered nickelates La3Ni2O7. Japanese Journal of Applied Physics. 64 [10] (2025) 100905 10.35848/1347-4065/ae0ee7 | |
| Ahmed Mahmoud, Ryo Matsumura, Naoki Fukata. Plasma-assisted crystallization of germanium monosulfide in sub-100 nm on-insulator molecular-beam deposited thin films. Japanese Journal of Applied Physics. 64 [9] (2025) 09SP02 10.35848/1347-4065/adf8f8 Open Access | |
| Kenta Ogawa, Toyohiro Chikyow, Yuki Daimon, Atsushi Ogura, Takahiro Nagata. Effects of interface formation process on electronic properties of n-type Ti0.3Zn0.7O1.3/p-type Si stack structure. Japanese Journal of Applied Physics. 64 [5] (2025) 05SP25 10.35848/1347-4065/add0be | |
