SAMURAI - NIMS Researchers Database

NIMS材料技術展示会2023 - NIMS Technology Showcase2023 10/11

HOME > Search researchers > Search by subject

Search by subject

You can search NIMS articles by Clarivate ESI category (Materials Science, Physics, Chemistry, Engineering, Biology and etc.), title and terms from abstract.

Last updated: October 04, 2023

29 article(s) found. Sorted by publication dates. (Help)
  • Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins. Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture. Advanced Electronic Materials. 9 [2] (2023) 2201007 10.1002/aelm.202201007
  • Shinji Isogami, Yukiko K. Takahashi. Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications. Advanced Electronic Materials. 9 [1] (2023) 10.1002/aelm.202200515
  • Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama. Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations. Advanced Electronic Materials. 9 [1] (2023) 2200704 10.1002/aelm.202200704
  • Eike Icking, Luca Banszerus, Frederike Wörtche, Frank Volmer, Philipp Schmidt, Corinne Steiner, Stephan Engels, Jonas Hesselmann, Matthias Goldsche, Kenji Watanabe, Takashi Taniguchi, Christian Volk, Bernd Beschoten, Christoph Stampfer. Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene. Advanced Electronic Materials. 8 [11] (2022) 2200510 10.1002/aelm.202200510
  • Huije Ryu, Dong‐Hyun Kim, Junyoung Kwon, Sang Kyu Park, Wanggon Lee, Hyungtak Seo, Kenji Watanabe, Takashi Taniguchi, SunPhil Kim, Arend M. van der Zande, Jangyup Son, Gwan‐Hyoung Lee. Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors. Advanced Electronic Materials. 8 [10] (2022) 2101370 10.1002/aelm.202101370
  • Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb 1− x Sn x )Se. Advanced Electronic Materials. 8 [9] (2022) 2200024 10.1002/aelm.202200024
  • Jian Wang, Yong‐Chang Lau, Weinan Zhou, Takeshi Seki, Yuya Sakuraba, Takahide Kubota, Keita Ito, Koki Takanashi. Strain‐Induced Large Anomalous Nernst Effect in Polycrystalline Co 2 MnGa/AlN Multilayers. Advanced Electronic Materials. 8 [9] (2022) 2101380 10.1002/aelm.202101380
  • Sungwon Lee, Hyungyu Choi, Inyong Moon, Hoseong Shin, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo. Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors. Advanced Electronic Materials. 8 [5] (2022) 2101169 10.1002/aelm.202101169
  • Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka. A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components. Advanced Electronic Materials. 8 [8] (2022) 2100645 10.1002/aelm.202100645
  • Debdatta Panigrahi, Ryoma Hayakawa, Kota Fuchii, Yoichi Yamada, Yutaka Wakayama. Optically Controlled Ternary Logic Circuits Based on Organic Antiambipolar Transistors. Advanced Electronic Materials. 7 [1] (2021) 2000940 10.1002/aelm.202000940
  • ▲ Go to the top of this page