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You can search NIMS articles by Clarivate ESI category (Materials Science, Physics, Chemistry, Engineering, Biology and etc.), title and terms from abstract.

Last updated: August 13, 2022

170 article(s) found. Sorted by publication dates. (Help)
  • Tommi Tynell, Takashi Aizawa, Isao Ohkubo, Katsumitsu Nakamura, Takao Mori. Deposition of thermoelectric strontium hexaboride thin films by a low pressure CVD method. Journal of Crystal Growth. 449 (2016) 10-14 10.1016/j.jcrysgro.2016.05.030
  • T. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, H. Osawa, M. Kitabatake. Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy. Journal of Crystal Growth. 416 (2015) 142-147 10.1016/j.jcrysgro.2015.01.034
  • Masaru Nakamura, Hiroaki Nakamura, Takeo Ohsawa, Masataka Imura, Kiyoshi Shimamura, Naoki Ohashi. AgBiS 2 single crystal grown using slow cooling method and its characterization. Journal of Crystal Growth. 411 (2015) 1-3 10.1016/j.jcrysgro.2014.10.042
  • Ken Kanazawa, Kazuma Yamawaki, Naoya Sekita, Yôtarô Nishio, Shinji Kuroda, Masanori Mitome, Yoshio Bando. Structural and magnetic properties of hexagonal Cr 1−δ Te films grown on CdTe(001) by molecular beam epitaxy. Journal of Crystal Growth. 415 (2015) 31-35 10.1016/j.jcrysgro.2014.12.032
  • Toshio Konno, Takatsugu Wakahara, Kun’ichi Miyazawa. Synthesis and structural analysis of C60–C70 two-component fullerene nanowhiskers. Journal of Crystal Growth. 416 (2015) 41-46 10.1016/j.jcrysgro.2014.12.016
  • Masaru Nakamura, Hiroaki Nakamura, Takeo Ohsawa, Masataka Imura, Kiyoshi Shimamura, Naoki Ohashi, NAKAMURA, Masaru, NAKAMURA, Hiroaki, OHSAWA, Takeo, IMURA, Masataka, SHIMAMURA, Kiyoshi, OHASHI, Naoki. AgBiS 2 single crystal grown using slow cooling method and its characterization. Journal of Crystal Growth. 411 (2015) 1-3
  • Yuichi Oshima, Encarnaciόn G. Vίllora, Kiyoshi Shimamura. Quasi-heteroepitaxial growth of β-Ga 2 O 3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy. Journal of Crystal Growth. 410 (2015) 53-58 10.1016/j.jcrysgro.2014.10.038
  • Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi. Crystal growth of 50cm square mono-like Si by directional solidification and its characterization. Journal of Crystal Growth. 401 (2014) 133-136 10.1016/j.jcrysgro.2014.03.016
  • Ronit R. Prakash, Takashi Sekiguchi, Karolin Jiptner, Yoshiji Miyamura, Jun Chen, Hirofumi Harada, Koichi Kakimoto. Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal. Journal of Crystal Growth. 401 (2014) 717-719 10.1016/j.jcrysgro.2014.01.067
  • Karolin Jiptner, Bing Gao, Hirofumi Harada, Yoshiji Miyamura, Masayuki Fukuzawa, Koichi Kakimoto, Takashi Sekiguchi. Thermal stress induced dislocation distribution in directional solidification of Si for PV application. Journal of Crystal Growth. 408 (2014) 19-24 10.1016/j.jcrysgro.2014.09.017
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