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You can search NIMS articles by Clarivate ESI category (Materials Science, Physics, Chemistry, Engineering, Biology and etc.), title and terms from abstract.

Last updated: September 07, 2024

1779 article(s) found. Sorted by publication dates. (Help)
  • Asem Elarabi, Yoshito Saito, Hidehiro Asai, Ryota Kobayashi, Ken Hayama, Keiichiro Maeda, Shuma Fujita, Yusuke Yoshioka, Yoshihiko Takano, Manabu Tsujimoto, Itsuhiro Kakeya. Polarized terahertz electromagnetic-wave radiation from cuprate superconductor Bi2212 mesa structures. Japanese Journal of Applied Physics. 63 [2] (2024) 020801 10.35848/1347-4065/ad0cdd Open Access
  • Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 135 [18] (2024) 185701 10.1063/5.0201931 Open Access
  • Takuya Iwasaki, Yodai Sato, Makoto Ogo, Byunghun Oh, Daichi Kozawa, Ryo Kitaura, Kenji Watanabe, Takashi Taniguchi, Satoshi Moriyama, Junichi Fujikata. Photo-thermoelectric effect-driven detection of optical communication light in graphene/hBN heterostructures. Japanese Journal of Applied Physics. 63 [3] (2024) 030903 10.35848/1347-4065/ad2bd6
  • Tianshun Xie, Mengnan Ke, Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki. Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation. Japanese Journal of Applied Physics. 63 [2] (2024) 02SP49 10.35848/1347-4065/ad16bc
  • Akihiro Ohtake, Takaaki Mano. Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers. Japanese Journal of Applied Physics. 63 [3] (2024) 03SP10 10.35848/1347-4065/ad2032 Open Access
  • Wataru Namiki, Takashi Tsuchiya, Daiki Nishioka, Tohru Higuchi, Kazuya Terabe. Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing. Japanese Journal of Applied Physics. 63 [3] (2024) 03SP13 10.35848/1347-4065/ad1fb0 Open Access
  • Chao Zhuang, Kosuke Minami, Kota Shiba, Genki Yoshikawa. Tailoring stresses in piezoresistive microcantilevers for enhanced surface stress sensing: insights from topology optimization. Japanese Journal of Applied Physics. 63 [1] (2024) 015005 10.35848/1347-4065/ad1939
  • Kenneth Magallon Senados, Mariana S. L. Lima, Takashi Aizawa, Isao Ohkubo, Takahiro Baba, Akira Uedono, Takeaki Sakurai, Takao Mori. Influence of Ge to the formation of defects in epitaxial Mg2Sn1−x Ge x thermoelectric thin films. Japanese Journal of Applied Physics. 63 [2] (2024) 02SP40 10.35848/1347-4065/ad1259 Open Access
  • Aika Tashiro, Yutaka Adachi, Takashi Uchino. Excitonic processes and lasing in ZnO thin films and micro/nanostructures. Journal of Applied Physics. 133 [22] (2023) 221101 10.1063/5.0142719
  • Hironori Okumura, Yohei Ogawara, Manabu Togawa, Masaya Miyahara, Tadaaki Isobe, Kosuke Itabashi, Jiro Nishinaga, Masataka Imura. Degradation of vertical GaN diodes during proton and xenon-ion irradiation. Japanese Journal of Applied Physics. 62 [6] (2023) 064001 10.35848/1347-4065/acddb4 Open Access
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