| 208 article(s) found. Sorted by publication dates. (Help) | |
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| J.Isoya, H.Kand, J. Isoya, H. Kanda, M. Akaishi, Y. Morita, T. Ohshima. ESR studies of incorporation of phosphorus into high-pressure synthetic diamond. Diamond and Related Materials. 6 [2-4] (1997) 356-360 10.1016/s0925-9635(96)00602-4 | |
| I.Kiflawi, H.Kand, I. Kiflawi, H. Kanda, D. Fisher, S.C. Lawson. The aggregation of nitrogen and the formation of A centers in diamond. Diamond and Related Materials. 6 [11] (1997) 1643-1649 10.1016/s0925-9635(97)00207-0 | |
| A.V.Andreyev, H.Kand, A.V. Andreyev, H. Kanda. Diamond formation and wettability in a Mg-Cu-C system under high pressure and high temperature. Diamond and Related Materials. 6 [1] (1997) 28-32 10.1016/s0925-9635(96)00576-6 | |
| I.Kiflawi, H.Kand, I. Kiflawi, G. Sittas, H. Kanda, D. Fisher. The irradiation and annealing of Si-doped diamond single crystals. Diamond and Related Materials. 6 [1] (1997) 146-148 10.1016/s0925-9635(96)00590-0 | |
| 蒲生西谷美香, ANDO, Toshihiro, WATANABE, Kenji, 関田正實, Paul.A.Dennig, 山本一雄, 佐藤洋一郎. Interfatial structures of oriented diamond on Si(100) characterized by confocal raman spectroscopy. Diamond and Related Materials. (1996) | |
| G.Sittas, 神田久生, I.Kiflawi, P.M.Spear. Growth and characterization of Si-doped diamond single crystals grown by the HTHP method. Diamond and Related Materials. (1996) 866-869 | |
| 清田英夫, 太串英世, ANDO, Toshihiro, 加茂睦和, 佐藤洋一郎. Electrical properties of a schottky barrier formed on a homoepitaxially grown diamond (001) film. Diamond and Related Materials. (1996) 718-722 | |
| 神田久生, 大沢俊一. Growth hillocks on the {111} surface of high pressure synthetic diamond. DIAMOND and RELATED MATERIALS. (1996) 8 | |
| ANDO, Toshihiro, HANEDA, Hajime, 赤石實, 佐藤洋一郎, 加茂睦和. Oxygen impurities at the homoepitaxially grown diamond-substrate interface analyzed by secondary ion mass spectrometry. DIAMOND and RELATED MATERIALS. (1996) 34 | |
| N.Yokonaga, Y.Kats, 町田宅広, 犬塚直夫, Satoshi Koizumi, 鈴木一博, Noriyuki Yokonaga, Yoshihiro Katsu, Takahiro Machida, Tadao Inuzuka, Kazuhiro Suzuki. Oriented growth of diamond on thermally carburized silicon substrates. Diamond and Related Materials. 5 [1] (1996) 43-47 10.1016/0925-9635(95)00334-7 | |