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You can search NIMS articles by Clarivate ESI category (Materials Science, Physics, Chemistry, Engineering, Biology and etc.), title and terms from abstract.

Last updated: April 28, 2025

204 article(s) found. Sorted by publication dates. (Help)
  • 清田英夫, 松島栄一, 佐藤啓介, 大串英世, ANDO, Toshihiro, 田中順三. Electrical properties of B-doped homoepitaxial diamond(001) film. Diamond and Related Materials. (1997)
  • I.Kiflawi, KANDA, Hisao, D.Fisher, S.C.Lawson. The aggregation of nitrogen and the formation of a centres in diamonds. Diamond and Related Materials. (1997) 1643-1349
  • TANIGUCHI, Takashi, 佐藤忠夫, 内海渉, 亀卦川卓美, 下村理. In-situ x-ray observation of phase transformation of rhombohedral boron nitride under static high pressure and high temperature. Diamond and Related Materials. (1997) 1806-1815
  • A.V.Andreyev, KANDA, Hisao. Diamond formation and wettability in a Mg-Cu-C system under high pressure and high temperature. Diamond and Related Materials. (1997)
  • SHIMOMURA, Shuichi, KANDA, Hisao, 中沢弘基. Observation of micro-inclusion in diamond by scanning x-ray analytical microscope. Diamond and Related Materials. (1997) 1680-1682
  • KANDA, Hisao, WATANABE, Kenji. Distribution of the cobalt-related luminescence center in HPHT diamond. Diamond and Related Materials. (1997) 708-711
  • J.Isoya, H.Kand, J. Isoya, H. Kanda, M. Akaishi, Y. Morita, T. Ohshima. ESR studies of incorporation of phosphorus into high-pressure synthetic diamond. Diamond and Related Materials. 6 [2-4] (1997) 356-360 10.1016/s0925-9635(96)00602-4
  • I.Kiflawi, H.Kand, I. Kiflawi, H. Kanda, D. Fisher, S.C. Lawson. The aggregation of nitrogen and the formation of A centers in diamond. Diamond and Related Materials. 6 [11] (1997) 1643-1649 10.1016/s0925-9635(97)00207-0
  • A.V.Andreyev, H.Kand, A.V. Andreyev, H. Kanda. Diamond formation and wettability in a Mg-Cu-C system under high pressure and high temperature. Diamond and Related Materials. 6 [1] (1997) 28-32 10.1016/s0925-9635(96)00576-6
  • I.Kiflawi, H.Kand, I. Kiflawi, G. Sittas, H. Kanda, D. Fisher. The irradiation and annealing of Si-doped diamond single crystals. Diamond and Related Materials. 6 [1] (1997) 146-148 10.1016/s0925-9635(96)00590-0
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