| 180 article(s) found. Sorted by publication dates. (Help) | |
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| H. Suzuki, H. Kitazawa, G. Kido, 名嘉節, J. Tang, T. Naka. Studies of Pressure effects on the Heavy Fermion Compound of CePb3. Solid State Communications. 107 [9] (1998) 447-452 10.1016/s0038-1098(98)00259-2 | |
| 宮本悟, TAKEYA, Hiroyuki, 門脇和男. Shuvnikov-de Haas Oscilation and Magneto Resistance in YNi2B2C. Solid State Communications(Solid.State.Comm). (1997) | |
| 平田俊也, 平田俊也, YOKOKAWA, Tadaharu, YOKOKAWA Tadaharu. Variable-temperature x-ray diffraction of the ferroelectric transition in Bi4Ti3O12. Solid State Communications. 104 (1997) 873 | |
| S. Uji, J.S.Brooks, 高橋聰, 山田順一, 安西弘行, J.S. Brooks, S. Takasaki, J. Yamada, H. Anzai. Origin of Rapid Oscillation in the Metallic Phase for the Organic Conductor(TMTSF)2 ClO4. Solid State Communications. 103 [7] (1997) 387-392 10.1016/s0038-1098(97)00209-3 | |
| 中村一隆, K. Ishioka, M. Kitajima, 村上弘一, K.G. Nakamura, K. Murakami. Ab Initio Calculation of the Hydrogen Molecule in Silicon. Solid State Communications. 101 [10] (1997) 735-738 10.1016/s0038-1098(96)00694-1 | |
| M.M.Korsukova, V.N.Gurin, OTANI, Shigeki, 石澤芳夫. Solid solution hardening and atomic displacement parameters in La1-xCexB6 crystals. Solid State Communications. (1996) 215-219 | |
| 枝元一之, 穴沢俊久, 徳光秀造, 田辺昭大, 関根理香, 宮崎栄三, 加藤博雄, OTANI, Shigeki. Surface Induced State on ZrC(111):Angle-Resolved Photoemission Study. Solid State Communications. (1996) 435 | |
| UJI, Shinya, J.S.Brooks, J.S.Brooks. Wave Shape of de Haas-van Alphen Oscillation and Effective Mass in the Two Dimensional Organic Conductor α－(BEDT-TTF)2KHg(SCN). Solid State Communications. 12 [100] (1996) 825-830 | |
| Jie Tang, 松本武彦, 小阪孝幸, 松村武, 鈴木孝, 毛利信男, Takayuki Kosaka, Takeshi Matsumura, Takehiko Matsumoto, Nobuo Môri, Takashi Suzuki. The Valance State of TmTe of High Pressure. Solid State Communications. 100 [8] (1996) 571-574 10.1016/0038-1098(96)00473-5 | |
| M. Kitajima, 上岡功, 中村一隆, 河辺隆也, I. Kamioka, K.G. Nakamura, T. Kawabe. An Ellipsometry Study of the Effects of DC Bias of the Plasma Oxidation of Silicon. Solid State Communications. 97 [6] (1996) 531-534 10.1016/0038-1098(95)00618-4 | |
