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Last updated: April 21, 2026
| 1346 article(s) found. Sorted by publication dates. (Help) | |
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| T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, M. Aono. Nanometer-scale switches using copper sulfide. Applied Physics Letters. 82 [18] (2003) 3032-3034 10.1063/1.1572964 | |
| Xi-wen Du, Masaki Takeguchi, Miyoko Tanaka, Kazuo Furuya. Formation of Crystalline Si Nanodots in SiO2 Films by Electron Irradiation. Applied Physics Letters. 82 [7] (2003) 1108-1110 10.1063/1.1555691 | |
| Shin’ichi Higai, Takahisa Ohno. Structures of nitrided Si(001) surfaces: first-principles theoretical study. Applied Physics Letters. 82 [23] (2003) 4044-4046 10.1063/1.1580639 | |
| Kazuya Terabe, Masaru Nakamura, Shunji Takekawa, Kenji Kitamura, Shinji Higuchi, Yoshihiko Gotoh, Yasuo Cho. Microsvale to nanoscale ferroelectric domain and surface engineering of a near-stoichiometric LiNbO3 crystal. Applied Physics Letters. 82 [3] (2003) 433-435 10.1063/1.1538351 | |
| Jun Onoe, Tomonobu Nakayama, Masakazu Aono, Toshiki Hara. The structural and electrical properties of an electron-beam-irradiated C60 film. Applied Physics Letters. 82 [4] (2003) 595-597 10.1063/1.1542943 | |
| YUNKyungsung. Vapor-liquid-solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7-x single crystal films. APPLIED PHYSICS LETTERS. (2002) 61-63 | |
| K.S.Yun. Vapor-liquid-Solid tri-phase pulsed laser epitaxy of RBa2Cu3O70y single crystal films. APPLIED PHYSICS LETTERS. (2002) 61-63 | |
| TANIGUCHI, Takashi. Ultraviolet light emission from self-organized p-n domains in cubic boron nitride single crystals grown under high pressure. APPLIED PHYSICS LETTERS. (2002) 4145-4147 | |
| Y.-Z. Yoo, Zheng-Wu Jin, T. Chikyow, T. Fukumura, M. Kawasaki, H. Koinuma. S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method. Applied Physics Letters. 81 [20] (2002) 3798-3800 10.1063/1.1521577 | |
| S. Sanguinetti, T. Mano, M. Oshima, T. Tateno, M. Wakaki, N. Koguchi. Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer. Applied Physics Letters. 81 [16] (2002) 3067-3069 10.1063/1.1516632 | |
