| 268件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Shinya Uji, Hishiro T. Hirose, Taichi Terashima, Yasuhito Matsubayashi, Daigorou Hirai, Zenji Hiroi, Takumi Hasegawa. Successive Continuous Phase Transitions in Spin–Orbit Coupled Metal Cd2Re2O7. Journal of the Physical Society of Japan. 90 [6] (2021) 064714 10.7566/jpsj.90.064714 | |
| Hiroaki Nakamura, Hisanori Miyanishi, Takuo Yasunaga, Susumu Fujiwara, Tomoko Mizuguchi, Ayako Nakata, Tsuyoshi Miyazaki, Takao Otsuka, Takahiro Kenmotsu, Yuji Hatano, Shinji Saito. Molecular dynamics study on DNA damage by tritium disintegration. Japanese Journal of Applied Physics. 59 [SA] (2020) SAAE01 10.7567/1347-4065/ab460d | |
| Takeshi Yasuda, Kenji Sakamoto. Photovoltaic properties of planar organic solar cells using perylenetetracarboxylic diimide with phenylethyl derivatives. Japanese Journal of Applied Physics. 59 [SD] (2020) SDDD01 10.7567/1347-4065/ab54fe | |
| Tin Phan Nguy, Ryoma Hayakawa, Volkan Kilinc, Matthieu Petit, S L V Narayana Yemineni, Masayoshi Higuchi, Jean-Manuel Raimundo, Anne M. Charrier, Yutaka Wakayama. Electrolyte-gated-organic field effect transistors functionalized by lipid monolayers with tunable pH sensitivity for sensor applications. Applied Physics Express. 13 [1] (2020) 011005 10.7567/1882-0786/ab5322 | |
| Takuya Iwasaki, Taku Kato, Hirohito Ito, Kenji WATANABE, Takashi Taniguchi, Yutaka Wakayama, Tsuyoshi Hatano, Satoshi Moriyama. Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures. Japanese Journal of Applied Physics. (2019) 10.7567/1347-4065/ab65a8 | |
| Yoshiki Nakajima, Hiromasa Murata, Yuya Kado, Ryo MATSUMURA, Naoki FUKATA, Takashi SUEMASU, Kaoru TOKO. Fe-induced layer exchange of multilayer graphene for rechargeable battery anodes. Applied Physics Express. (2019) 10.7567/1882-0786/ab5e3a | |
| Tin Phan Nguy, Ryoma Hayakawa, Volkan Kilinc, Matthieu Petit, Jean-Manuel Raimundo, Anne Charrier, Yutaka Wakayama. Stable operation of water-gated organic field-effect transistor depending on channel flatness, electrode metals and surface treatment. Japanese Journal of Applied Physics. 58 [SD] (2019) SDDH02 10.7567/1347-4065/ab09d2 | |
| Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma. Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor. Japanese Journal of Applied Physics. 58 [SI] (2019) SIIB05 10.7567/1347-4065/ab0c76 | |
| Katsunori Ueno, Takahiro Tadokoro, Yuichiro Ueno, Keisuke Sasaki, Satoshi Koizumi, Akiyoshi Chayahara, Yoshiaki Mokuno, Shintaro Hirano, Junichi H. Kaneko. Heat and radiation resistances of diamond semiconductor in gamma-ray detection. Japanese Journal of Applied Physics. 58 [10] (2019) 106509 10.7567/1347-4065/ab4044 | |
| Kei Terayama, Koji Tsuda, Ryo Tamura. Efficient recommendation tool of materials by an executable file based on machine learning. Japanese Journal of Applied Physics. 58 [9] (2019) 098001 10.7567/1347-4065/ab349b Open Access | |
