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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2026年09月04日

1554件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • MATSUMOTO, Ryo, Souma Kodani, HITSUDA, Eiji, Yuki Nishimiya, NEMOTO, Yoshihiro, TAKANO, Yoshihiko, Hiromi Tanaka, Souma Kodani, Hiromi Tanaka. Growth of Ruddlesden–Popper phase La4Ni3O10 thin film on LaAlO3 substrate via pulsed laser deposition method. Journal of Applied Physics. 140 [7] (2026) 075301 10.1063/5.0338425
  • SASAKI, Michiko, XU, Yibin, MORI, Takao, GOTO, Masahiro. Independent control of the thermoelectric parameters in titanium nitride thin films via crystal preferred orientation control using the combinatorial sputter coating. Japanese Journal of Applied Physics. 65 [7] (2026) 07SP32 10.35848/1347-4065/ae5197
  • Yusuke Kawagishi, Taiki Wada, MATSUMOTO, Akiyoshi, Ryo Teranishi, Yusuke Kawagishi, Taiki Wada, Ryo Teranishi. Observation of microstructural defects on delaminated surfaces of REBCO coated conductors and mechanistic analysis of delamination. Japanese Journal of Applied Physics. 65 [15] (2026) 155501 10.35848/1347-4065/ae8a99
  • Adrija Das, BARMAN, Barun, NGO, Duc Thien, WANG, Chih-Hsing, WATANABE, Keisuke, NAGAO, Tadaaki, Thien Duc Ngo. Highly efficient NIR heat shielding and UV-A blocking by porous nano-composite film of cesium tungsten oxide nanoparticles and carbon dots. Japanese Journal of Applied Physics. 65 [5] (2026) 05SP07 10.35848/1347-4065/ae3aef
  • LIU, Jiangwei, TERAJI, Tokuyuki. Impact of doping profile on electrical performance of boron-doped diamond metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics. 140 [2] (2026) 024504 10.1063/5.0318837 Open Access
  • ISHIDA, Nobuyuki. An open-source framework for quantitative electrostatic simulations in Kelvin probe force microscopy. Journal of Applied Physics. 140 [2] (2026) 024301 10.1063/5.0336722 Open Access
  • OSHIMA, Takayoshi, OSHIMA, Yuichi. (110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates. Japanese Journal of Applied Physics. 65 [13] (2026) 138001 10.35848/1347-4065/ae83f5 Open Access
  • ONAYA, Takashi, NABATAME, Toshihide. Interface engineering of HfO 2 -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO 2 nucleation layers. Japanese Journal of Applied Physics. 65 [8] (2026) 080804 10.35848/1347-4065/ae5662 Open Access
  • Rachida Lamouri, NISHINO, Masamichi. Monte Carlo simulation of transverse-field-induced spin reorientation in Dy2Fe14B under atomic-scale thermal fluctuations. Journal of Applied Physics. 139 [22] (2026) 223904 10.1063/5.0333345
  • Yuki Kato, Koryo Masuzawa, HARADA, Takayuki, Hideto Miyake, Atsushi Kobayashi, Yuki Kato, Koryo Masuzawa, Hideto Miyake, Atsushi Kobayashi. Phase-selective sputter epitaxy of δ -NbN, γ -Nb4N3, and β -Nb2N on atomically flat AlN. Journal of Applied Physics. 139 [18] (2026) 185301 10.1063/5.0311297 Open Access
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