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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年04月25日

85件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Roman Fetzer, Siham Ouardi, Yusuke Honda, Hong-xi Liu, Stanislav Chadov, Benjamin Balke, Shigenori Ueda, Motohiro Suzuki, Tetsuya Uemura, Masafumi Yamamoto, Martin Aeschlimann, Mirko Cinchetti, Gerhard H Fecher, Claudia Felser. Spin-resolved low-energy and hard x-ray photoelectron spectroscopy of off-stoichiometric Co2MnSi Heusler thin films exhibiting a record TMR. Journal of Physics D: Applied Physics. 48 [16] (2015) 164002 10.1088/0022-3727/48/16/164002
  • Olga Meshcheriakova, Albrecht Köhler, Siham Ouardi, Yukio Kondo, Takahide Kubota, Shekhar Chandra, Julie Karel, Carlos V Barbosa, Rolf Stinshoff, Roshnee Sahoo, Shigenori Ueda, Eiji Ikenaga, Shigemi Mizukami, Stanislav Chadov, Daniel Ebke, Gerhard H Fecher, Claudia Felser. Structural, electronic, and magnetic properties of perpendicularly magnetised Mn2RhSn thin films. Journal of Physics D: Applied Physics. 48 [16] (2015) 164008 10.1088/0022-3727/48/16/164008
  • T Seki, H Yako, T Yamamoto, T Kubota, Y Sakuraba, M Ueda, K Takanashi. Spin torque-induced magnetization dynamics in giant magnetoresistance devices with Heusler alloy layers. Journal of Physics D: Applied Physics. 48 [16] (2015) 164010 10.1088/0022-3727/48/16/164010
  • J Alvarez, M Boutchich, J P Kleider, T Teraji, Y Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging. Journal of Physics D: Applied Physics. 47 [35] (2014) 355102 10.1088/0022-3727/47/35/355102
  • Kang Yan, Xiaobing Ren. Multi-phase transition behaviour and large electrostrain in lead-free (K, Na, Li)NbO3ceramics. Journal of Physics D: Applied Physics. 47 [1] (2014) 015309 10.1088/0022-3727/47/1/015309
  • J W Koo, H Sukegawa, S Kasai, Z C Wen, S Mitani. Magnetotransport properties in perpendicularly magnetized tunnel junctions using an ultrathin Fe electrode. Journal of Physics D: Applied Physics. 47 [32] (2014) 322001 10.1088/0022-3727/47/32/322001
  • J-W Liu, M-Y Liao, M Imura, E Watanabe, H Oosato, Y Koide. Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material. Journal of Physics D: Applied Physics. 47 [24] (2014) 245102 10.1088/0022-3727/47/24/245102
  • K Tsukagoshi, S-L Li, H Miyazaki, A Aparecido-Ferreira, S Nakaharai. Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics. Journal of Physics D: Applied Physics. 47 [9] (2014) 094003 10.1088/0022-3727/47/9/094003
  • M Akai-Kasaya, Y Okuaki, S Nagano, A Saito, M Aono, Y Kuwahara. Isotropic charge transport in highly ordered regioregular poly(3-hexylthiophene) monolayer. Journal of Physics D: Applied Physics. 46 [42] (2013) 425303 10.1088/0022-3727/46/42/425303 Open Access
  • Minghui Song, Hiroshi Araki, Seiji Kuroda, Kazuhiko Sakaki. Reaction layer at the interface between aluminium particles and a glass substrate formed by cold spray. Journal of Physics D: Applied Physics. 46 [19] (2013) 195301 10.1088/0022-3727/46/19/195301
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