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分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年08月13日

755件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Nozomi Mishima, Tohru Tsuruoka, Tsuyoshi Hasegawa. Measurement of changes in resistance of a Ag2+δ S nano-island on removal of dopant δ-Ag atoms. Japanese Journal of Applied Physics. 60 [SE] (2021) SE1001 10.35848/1347-4065/abefab
  • Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCM01 10.35848/1347-4065/abe685
  • Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3. Japanese Journal of Applied Physics. 60 [3] (2021) 030903 10.35848/1347-4065/abde54
  • Mariana S. L. Lima, Takashi Aizawa, Isao Ohkubo, Takeaki Sakurai, Takao Mori. Improvement of power factor in the room temperature range of Mg2Sn1−x Ge x . Japanese Journal of Applied Physics. 60 [SB] (2021) SBBF06 10.35848/1347-4065/abd9cd
  • Amir Zulkefli, Bablu Mukherjee, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Yutaka Wakayama. Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBH01 10.35848/1347-4065/abd2a0
  • Haolun Li, Susumu Fujiwara, Hiroaki Nakamura, Tomoko Mizuguchi, Ayako Nakata, Tsuyoshi Miyazaki, Shinji Saito. Structural change of damaged polyethylene by beta-decay of substituted tritium using reactive force field. Japanese Journal of Applied Physics. 60 [SA] (2021) SAAB06 10.35848/1347-4065/abbdc8
  • Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano. Impact of high-temperature implantation of Mg ions into GaN. Japanese Journal of Applied Physics. 59 [5] (2020) 056502 10.35848/1347-4065/ab8b3d
  • Ryota Ishii, Shinichi Shikata, Tokuyuki Teraji, Hisao Kanda, Hideyuki Watanabe, Mitsuru Funato, Yoichi Kawakami. Intrinsic exciton transitions of isotopically purified 13C studied by photoluminescence and transmission spectroscopy. Japanese Journal of Applied Physics. 59 [1] (2020) 010903 10.7567/1347-4065/ab5b77
  • Takuya Kawazu. Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination. Japanese Journal of Applied Physics. 59 [12] (2020) 124003 10.35848/1347-4065/abc8a4
  • Qing Zhao, Tomohiro Abe, Chikako Moriyoshi, Sangwook Kim, Ayako Taguchi, Hiroki Moriwake, Hong-Tao Sun, Yoshihiro Kuroiwa. Charge order of bismuth ions and nature of chemical bonds in double perovskite-type oxide BaBiO3 visualized by synchrotron radiation X-ray diffraction. Japanese Journal of Applied Physics. 59 [9] (2020) 095505 10.35848/1347-4065/abb00d
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