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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2026年04月17日

137件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • O. Fukunaga, T. Miyake, N. Ohashi. Formation of diamond and graphite at high pressure using glassy carbon source. Diamond and Related Materials. 14 [2] (2005) 160-166 10.1016/j.diamond.2004.09.005
  • K. Haenen, M. Nesládek, L. De Schepper, R. Kravets, M. Vaněček, S. Koizumi. The phosphorous level fine structure in homoepitaxial and polycrystalline n-type CVD diamond. Diamond and Related Materials. 13 [11-12] (2004) 2041-2045 10.1016/j.diamond.2004.06.016
  • Z. Remes, C. Uzan-Saguy, E. Baskin, R. Kalish, Y. Avigal, M. Nesladek, S. Koizumi. Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures. Diamond and Related Materials. 13 [4-8] (2004) 713-717 10.1016/j.diamond.2003.11.027
  • R. Sauer, N. Teofilov, K. Thonke, S. Koizumi. Donor-related cathodoluminescence in phosphorus-doped CVD diamond. Diamond and Related Materials. 13 [4-8] (2004) 727-731 10.1016/j.diamond.2003.10.004
  • M. Mermoux, A. Tajani, B. Marcus, E. Bustarret, E. Gheeraert, M. Nesladek, S. Koizumi. Characterization of < 111 > diamond thin films by micro-Raman spectroscopy. Diamond and Related Materials. 13 [4-8] (2004) 886-890 10.1016/j.diamond.2003.12.002
  • Mariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, Tadashi Sakai, Masahiko Ogura, Hideyo Okushi, Satoshi Koizumi. Electrical properties of B-related acceptor in B-doped homoepitaxial diamond layers grown by microwave plasma CVD. Diamond and Related Materials. 13 [1] (2004) 198-202 10.1016/j.diamond.2003.10.036
  • Hannah E. Smith, Gordon Davies, M.E. Newton, H. Kanda. The eneregy levels of the self-interstitial in diamond. Diamond and Related Materials. 13 [4-8] (2004) 705-708 10.1016/j.diamond.2003.10.006
  • Toru Kuzumaki, Yasuhiro Horiike, Tokushi Kizuka, Takayuki Kona, Chuhei Oshima, Yoshitaka Mitsuda. The dynamic observation of the field emission site on electrons on a carbon nanotube tip. Diamond and Related Materials. 13 [10] (2004) 1907-1913 10.1016/j.diamond.2004.06.012
  • J Yu, S Matsumoto. Synthesis of thick and high quality cubic boron nitride films by r.f. bias assisted d.c. jet plasma chemical vapor deposition. Diamond and Related Materials. 13 [9] (2004) 1704-1708 10.1016/j.diamond.2004.02.010
  • O Fukunaga, S Nakano, T Taniguchi. Nucleation and growth of cubic boron nitride using a Ca-B-N solvent. Diamond and Related Materials. 13 [9] (2004) 1709-1713 10.1016/j.diamond.2004.02.013
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