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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年04月18日

237件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Zhihao Jiang, Kimberly Hsieh, Alfred J H Jones, Paulina Majchrzak, Chakradhar Sahoo, Kenji Watanabe, Takashi Taniguchi, Jill A Miwa, Yong P Chen, Søren Ulstrup. Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES. 2D Materials. 10 [4] (2023) 045027 10.1088/2053-1583/acf775 Open Access
  • Nikodem Sokolowski, Swaroop Palai, Mateusz Dyksik, Katarzyna Posmyk, Michał Baranowski, Alessandro Surrente, Duncan Maude, Felix Carrascoso, Onur Cakiroglu, Estrella Sanchez, Alina Schubert, Carmen Munuera, Takashi Taniguchi, Kenji Watanabe, Joakim Hagel, Samuel Brem, Andres Castellanos-Gomez, Ermin Malic, Paulina Plochocka. Twist-angle dependent dehybridization of momentum-indirect excitons in MoSe2/MoS2 heterostructures. 2D Materials. 10 [3] (2023) 034003 10.1088/2053-1583/acdbdb Open Access
  • Taoufiq Ouaj, Leonard Kramme, Marvin Metzelaars, Jiahan Li, Kenji Watanabe, Takashi Taniguchi, James H Edgar, Bernd Beschoten, Paul Kögerler, Christoph Stampfer. Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices. Nanotechnology. 34 [47] (2023) 475703 10.1088/1361-6528/acf2a0
  • Ajit Kumar Dash, Hariharan Swaminathan, Ethan Berger, Mainak Mondal, Touko Lehenkari, Pushp Raj Prasad, Kenji Watanabe, Takashi Taniguchi, Hannu-Pekka Komsa, Akshay Singh. Evidence of defect formation in monolayer MoS2 at ultralow accelerating voltage electron irradiation. 2D Materials. 10 [3] (2023) 035002 10.1088/2053-1583/acc7b6
  • E Katsipoulaki, G Vailakis, I Demeridou, D Karfaridis, P Patsalas, K Watanabe, T Taniguchi, I Paradisanos, G Kopidakis, G Kioseoglou, E Stratakis. Electron density control in WSe2 monolayers via photochlorination. 2D Materials. 10 [4] (2023) 045008 10.1088/2053-1583/ace980
  • Shimin Cao, Mantang Chen, Jiang Zeng, Ning Ma, Runjie Zheng, Ya Feng, Shili Yan, Jing Liu, Kenji Watanabe, Takashi Taniguchi, X C Xie, Jian-Hao Chen. Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate. 2D Materials. 10 [2] (2023) 025016 10.1088/2053-1583/acbdaa
  • Ryoma Hayakawa, Yutaka Wakayama. Vertical molecular transistors: a new strategy towards practical quantum devices. Nanotechnology. 34 [50] (2023) 502002 10.1088/1361-6528/acfb0b
  • Omar Azzaroni, Esteban Piccinini, Gonzalo Fenoy, Waldemar Marmisollé, Katsuhiko Ariga. Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics. Nanotechnology. 34 [47] (2023) 472001 10.1088/1361-6528/acef26
  • K Oreszczuk, A Rodek, M Goryca, T Kazimierczuk, M Raczyński, J Howarth, T Taniguchi, K Watanabe, M Potemski, P Kossacki. Enhancement of electron magnetic susceptibility due to many-body interactions in monolayer MoSe2. 2D Materials. 10 [4] (2023) 045019 10.1088/2053-1583/acefe3 Open Access
  • Man Li, Seunghyun Song, Yang Li, Wipakorn Jevasuwan, Naoki Fukata, Joonho Bae. Binder-free boron-doped Si nanowires toward the enhancement of lithium-ion capacitor. Nanotechnology. 34 [35] (2023) 355401 10.1088/1361-6528/acd702
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