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機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています（Materials Science, Physics, Chemistry, Engineering, Biologyなど）。
最終更新日: 2022年08月11日
| 138件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Makoto Tachibana, Akio Iwanade, Kokoro Miyakawa. Distribution coefficients for rare-earth doping in Y3Ga5O12 garnet: Comparison with Y3Al5O12. Journal of Crystal Growth. 590 (2022) 126700 10.1016/j.jcrysgro.2022.126700 | |
| Masatomo Sumiya, Yuki Takahara, Amira Alghamdi, Yoshiko Nakayama, Fumihiko Uesugi, Yoshitomo Harada, Akira Uedono, Yasutaka Imanaka. Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation. Journal of Crystal Growth. 574 (2021) 126324 10.1016/j.jcrysgro.2021.126324 | |
| Yuichi Oshima, Shingo Yagyu, Takashi Shinohe. Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching. Journal of Crystal Growth. 576 (2021) 126387 10.1016/j.jcrysgro.2021.126387 | |
| Masaru Nakamura, Hiroaki Nakamura, Kiyoshi Shimamura, Naoki Ohashi. Growth and characterization of a gallium monosulfide (GaS) single crystal using the Bridgman method. Journal of Crystal Growth. 573 (2021) 126303 10.1016/j.jcrysgro.2021.126303 | |
| Makoto Tachibana, Akio Iwanade, Kokoro Miyakawa. Distribution coefficient of rare-earth dopants in Y3Al5O12 garnet. Journal of Crystal Growth. 568-569 (2021) 126191 10.1016/j.jcrysgro.2021.126191 | |
| Dongsheng Yuan, Encarnación G. Víllora, Kiyoshi Shimamura. Regular hexagonal-prism microvoids in CeF3 single crystals. Journal of Crystal Growth. 558 (2021) 126024 10.1016/j.jcrysgro.2020.126024 | |
| Sayaka Yamamoto, Ryo Matsumoto, Shintaro Adachi, Yoshihiko Takano, Hiroyuki Muto, Hiromi Tanaka. Crystal size improvement of Bi-based superconducting whiskers under stress-controlled condition. Journal of Crystal Growth. 541 (2020) 125669 10.1016/j.jcrysgro.2020.125669 | |
| Makoto Tachibana. Ionic size dependence of distribution coefficient for rare-earth dopants in YVO4 crystal. Journal of Crystal Growth. 548 (2020) 125821 10.1016/j.jcrysgro.2020.125821 | |
| Masaru Nakamura, Hiroaki Nakamura, Yoshitaka Matsushita, Kiyoshi Shimamura, Naoki Ohashi. Growth of germanium monosulfide (GeS) single crystal by vapor transport from molten GeS source using a two-zone horizontal furnace. Journal of Crystal Growth. 547 (2020) 125813 10.1016/j.jcrysgro.2020.125813 | |
| Masatomo Sumiya, Kiyotaka Fukuda, Shuhei Yasiro, Tohru Honda. Influence of thin MOCVD-grown GaN layer on underlying AlN template. Journal of Crystal Growth. 532 (2020) 125376 10.1016/j.jcrysgro.2019.125376 | |
