SiO2/4H-SiC における界面準位と界面構造の相関 | SAMURAI, NIMS Researchers Directory Service

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SiO2/4H-SiC における界面準位と界面構造の相関
(Atomic Structures and Interface States Density at SiO2/4H-SiC Interface)

山下良之, インダリエフィダウィ, Ryu HASUNUMA.

表面と真空 64 [7] 312-317. 2021.

https://doi.org/10.1380/vss.64.312

Open Access 公益社団法人日本表面真空学会 (Publisher)

NIMS author(s)

YAMASHITA, Yoshiyuki

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-08-07 03:00:19 +0900Updated at: 2024-04-02 04:13:46 +0900

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