HOME > 論文 > 書誌詳細Effects of moisture and redox reactions in VCM and ECM resistive switching memoriesIlia Valov, Tohru Tsuruoka. Journal of Physics D: Applied Physics 51 [41] 413001. 2018.https://doi.org/10.1088/1361-6463/aad581 NIMS著者鶴岡 徹Materials Data Repository (MDR)上の本文・データセット作成時刻 :2018-09-06 15:10:01 +0900 更新時刻 :2020-11-16 22:28:55 +0900