Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy
(An Anomalous Peak on Intermediate Frequency Response of Superconductor-Isolator-Superconductor Mixers and Its Effect on Mixing Performance)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 14:40:52 +0900Updated at: 2024-04-02 06:15:30 +0900