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N+ion-implantation-induced defects in ZnO studied with a slow positron beam
(N+ion-implantation-induced defects in ZnO studied with a slow positron beam)

Z Q Chen, T Sekiguchi, X L Yuan, M Maekawa, A Kawasuso.
Journal of Physics: Condensed Matter 16 [2] S293-S299. 2004.
https://doi.org/10.1088/0953-8984/16/2/035

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