HOME > Article > DetailSiC film formation from fluorosilane gas by plasma CVD(プラズマCVD法によるフッ化シランからのSiC膜作製)Hiroshi Suzuki, Hiroshi Araki, Masahiro Tosa, Tetsuji Noda. Journal of Crystal Growth 294 [2] 464-468. 2006.https://doi.org/10.1016/j.jcrysgro.2006.07.003 NIMS author(s)SUZUKI, HiroshiTOSA, MasahiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 15:02:01 +0900Updated at: 2024-04-01 19:51:48 +0900